Grazing-Incidence Soft-X-ray Scattering for the Chemical Structure Size Distribution Analysis in EUV Resist

نویسندگان

چکیده

In extreme ultraviolet lithography (EUVL), it is required to develop EUV resist which has low line width roughness (LWR) for the further miniaturization of circuit pattern. order reduce LWR, necessary analyze and control chemical-components spatial distribution in thin film. We have reported that measurement film coated on Si3N4 membrane using method transmission-mode resonant soft X-ray scattering (RSoXS). this study, chemical-structure-size a Si wafer under similar condition adapted resist-coating actual process, we examined grazing-incidence RSoXS (GI-RSoXS). A chemically amplified (CAR) non-CAR were spin-coated silicon wafers, had varied thickness 20, 50, 100 nm. The profile each sample was measured at incident photon energy 280 296 eV. As result, suggested films depends thickness. It confirmed GI-RSoXS very effective evaluate films.

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ژورنال

عنوان ژورنال: Journal of Photopolymer Science and Technology

سال: 2022

ISSN: ['0914-9244', '1349-6336']

DOI: https://doi.org/10.2494/photopolymer.35.61